|
|
PDF K4S56163LC Data sheet ( Hoja de datos )
| Número de pieza | K4S56163LC | |
| Descripción | 16Mx16 Mobile SDRAM 54CSP | |
| Fabricantes | Samsung semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K4S56163LC (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
K4S56163LC-R(B)F/R
CMOS SDRAM
16Mx16
Mobile SDRAM
54CSP
(VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR)
Revision 1.4
December 2002
Rev. 1.4 Dec. 2002
1 page  
K4S56163LC-R(B)F/R
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25°C to 70°C)
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Version
Unit Note
-75 -1H -1L -15
75 70 65 60 mA 1
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
IC C 2 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
I C C 2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
0.5
0.5
15
10
mA
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
6
mA
6
Active Standby Current
IC C 3 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
in non power-down mode
(One Bank Active)
I C C 3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
25 mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
115 95 95 85 mA 1
Refresh Current
ICC5 tRC ≥ tR C(min)
Self Refresh Current
ICC6 CKE ≤ 0.2V
TCSR Range
4 Banks
-R(B)F 2 Banks
1 Bank
-R(B)R
4 Banks
2 Banks
165 155
Max 45°C
500
400
350
360
260
150 125
Max 70°C
750
550
420
630
430
mA
°C
uA
2
3
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S56163LC-R(B)F**
4. K4S56163LC-R(B)R**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
1 Bank
200
300
Rev. 1.4 Dec. 2002
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K4S56163LC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K4S56163LC | 16Mx16 Mobile SDRAM 54CSP | Samsung semiconductor |
| K4S56163LC-RF | 16Mx16 Mobile SDRAM 54CSP | Samsung semiconductor |
| K4S56163LF-XC | 4M x 16Bit x 4 Banks Mobile SDRAM | Samsung semiconductor |
| K4S56163LF-XE | 4M x 16Bit x 4 Banks Mobile SDRAM | Samsung semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |