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PDF K4S560832E-TC75 Data sheet ( Hoja de datos )

Número de pieza K4S560832E-TC75
Descripción 256Mb E-die SDRAM Specification
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K4S560832E-TC75 Hoja de datos, Descripción, Manual

SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification
Revision 1.3
September. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 September. 2003

1 page




K4S560832E-TC75 pdf
SDRAM 256Mb E-die (x4, x8, x16)
FUNCTIONAL BLOCK DIAGRAM
CMOS SDRAM
Data Input Register
CLK
ADD
Bank Select
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
16M x 4 / 8M x 8 / 4M x 16
Column Decoder
LCKE
LRAS
LCBR
LWE
LCAS
Latency & Burst Length
Programming Register
LWCBR
Timing Register
LWE
LDQM
DQi
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 September. 2003

5 Page





K4S560832E-TC75 arduino
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
-60
Min Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
-75
Min Max
Unit
Note
7.5
1000
ns
10
1
5.4
ns 1,2
6
3
ns 2
3
2.5 ns 3
2.5 ns 3
1.5 ns 3
0.8 ns 3
1 ns 2
5.4
ns
6
Notes : 1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
trh
tfh
trh
tfh
Condition
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Min
1.37
1.30
2.8
2.0
Typ
3.9
2.9
Notes : 1. Rise time specification based on 0pF + 50 to VSS, use these values to design to.
2. Fall time specification based on 0pF + 50 to VDD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to VSS.
Max
4.37
3.8
5.6
5.0
Unit
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Notes
3
3
1,2
1,2
Rev. 1.3 September. 2003

11 Page







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