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PDF K4S560832A Data sheet ( Hoja de datos )
| Número de pieza | K4S560832A | |
| Descripción | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | |
| Fabricantes | Samsung semiconductor | |
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K4S560832A
CMOS SDRAM
256Mbit SDRAM
8M x 8bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Sep. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Sep. 1999
1 page  
K4S560832A
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
Burst length = 1
ICC1 tRC ≥ tRC(min)
IO = 0 mA
Version
Unit Note
-75 -80 -1H -1L
120 120 110 110 mA 1
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
2
2
16
14
mA
mA
Active Standby current
in power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
6
30
25
mA
mA
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
IO = 0 mA
ICC4 Page burst
4banks activated.
tCCD = 2CLKs
ICC5 tRC ≥ tRC(min)
ICC6 CKE ≤ 0.2V
140 140 115 115 mA 1
210 210 200 200 mA 2
C 5 mA 3
L 2 mA 4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S560832A-TC**
4. K4S560832A-TL**
5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Rev. 0.0 Sep. 1999
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet K4S560832A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K4S560832A | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
| K4S560832B | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
| K4S560832C | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
| K4S560832D | 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
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