PDF K4S281632M-TL10 Data sheet ( Hoja de datos )

Número de pieza	K4S281632M-TL10
Descripción	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Fabricantes	Samsung semiconductor
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No Preview Available ! K4S281632M CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 1 page K4S281632M CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating current (One bank active) Symbol Test Condition ICC1 Burst length = 1 tRC ≥ tRC(min) IOL = 0 mA CAS Latency Version -80 -1H -1L -10 Unit 130 120 120 115 mA Precharge standby current in power-down mode Precharge standby current in non power-down mode ICC2P ICC2PS ICC2N CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min),CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 1 1 15 7 mA mA Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns. ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 5 5 30 20 mA mA mA Operating current (Burst mode) ICC4 IOL = 0 mA Page burst tCCD = 2CLKs 3 170 145 145 145 mA 2 135 145 135 135 Refresh current Self refresh current ICC5 ICC6 tRC ≥ tRC(min) CKE ≤ 0.2V 200 165 mA C 1.5 mA L 800 uA Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632M-TC 4. K4S281632M-TL Note 1 1 2 3 4 Rev. 0.0 Aug. 1999 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
K4S281632M-TL10	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S281632M-TL1H	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S281632M-TL1L	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor

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