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Número de pieza | K4S281632M-L10 | |
Descripción | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | |
Fabricantes | Samsung semiconductor | |
Logotipo | ||
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No Preview Available ! K4S281632M
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
1 page K4S281632M
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Operating current
(One bank active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tRC(min)
IOL = 0 mA
CAS
Latency
Version
-80 -1H -1L -10
Unit
130 120 120 115 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
CKE ≤ VIL(max), tCC = 15ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min),CS ≥ VIH(min),tCC=15ns
Input signals are changed one time during 30ns
ICC2NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
1
15
7
mA
mA
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
CKE ≤ VIL(max), tCC = 15ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns.
ICC3NS
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
5
30
20
mA
mA
mA
Operating current
(Burst mode)
ICC4
IOL = 0 mA
Page burst
tCCD = 2CLKs
3 170 145 145 145
mA
2 135 145 135 135
Refresh current
Self refresh current
ICC5
ICC6
tRC ≥ tRC(min)
CKE ≤ 0.2V
200 165 mA
C 1.5 mA
L 800 uA
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632M-TC**
4. K4S281632M-TL**
Note
1
1
2
3
4
Rev. 0.0 Aug. 1999
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet K4S281632M-L10.PDF ] |
Número de pieza | Descripción | Fabricantes |
K4S281632M-L10 | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S281632M-L1H | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
K4S281632M-L1L | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | Samsung semiconductor |
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