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PDF K4S281632B-TC1H Data sheet ( Hoja de datos )

Número de pieza K4S281632B-TC1H
Descripción 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! K4S281632B-TC1H Hoja de datos, Descripción, Manual

K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999

1 page




K4S281632B-TC1H pdf
K4S281632B
CMOS SDRAM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
Burst length = 1
ICC1 tRC tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P CKE VIL(max), tCC = 10ns
ICC2PS CKE & CLK VIL(max), tCC =
ICC2N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC2NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P CKE VIL(max), tCC = 10ns
ICC3PS CKE & CLK VIL(max), tCC =
ICC3N
CKE VIH(min), CS VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
ICC3NS
CKE VIH(min), CLK VIL(max), tCC =
Input signals are stable
Operating current
(Burst mode)
IO = 0 mA
ICC4
Page burst
4Banks Activated
tCCD = 2CLKs
Refresh current
Self refresh current
ICC5 tRC tRC(min)
ICC6 CKE 0.2V
C
L
Version
Unit Note
-75 -80 -1H -1L -10
150 150 140 140 140 mA 1
1
mA
1
20
mA
7
5
mA
5
30 mA
20 mA
180 170 145 145 145 mA 1
220 220 210 210 210 mA
1.5 mA
800 uA
2
3
4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632B-TC**
4. K4S281632B-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 0.0 Aug. 1999

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