PDF K4S280832M Data sheet ( Hoja de datos )

Número de pieza	K4S280832M
Descripción	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Fabricantes	Samsung semiconductor
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No Preview Available ! K4S280832M CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 1 page K4S280832M CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating current (One bank active) Symbol Test Condition Burst length = 1 ICC1 tRC ≥ tRC(min) IOL = 0 mA CAS Latency Version Unit Note -80 -1H -1L -10 120 110 110 105 mA 1 Precharge standby current in power-down mode ICC2P ICC2PS CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ 1 mA 1 Precharge standby current in non power-down mode ICC2N CKE ≥ VIH(min),CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 15 7 mA Active standby current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N CKE ≤ VIL(max), tCC = 15ns CKE & CLK ≤ VIL(max), tCC = ∞ CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns. ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 5 5 30 20 mA mA mA Operating current (Burst mode) IOL = 0 mA ICC4 Page burst tCCD = 2CLKs 3 150 125 125 125 mA 1 2 115 125 115 115 Refresh current Self refresh current ICC5 ICC6 tRC ≥ tRC(min) CKE ≤ 0.2V 200 165 mA 2 C 1.5 mA 3 L 800 uA 4 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S280832M-TC 4. K4S280832M-TL Rev. 0.0 Aug. 1999 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
K4S280832A	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280832B	128M-bit SDRAM	Samsung Electronics
K4S280832C	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung semiconductor
K4S280832E-TC75	128Mb E-die SDRAM Specification	Samsung semiconductor

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