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PDF S6004VS1 Data sheet ( Hoja de datos )

Número de pieza S6004VS1
Descripción Sensitive SCRs
Fabricantes Teccor Electronics 
Logotipo Teccor Electronics Logotipo



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TO-92
TO-202
3-lead
Compak
TO-252
D-Pak
*TO-220
Isolated
TO-251
V-Pak
AK
G
E5
General Description
The Teccor line of sensitive SCR semiconductors are half-wave
unidirectional, gate-controlled rectifiers (SCR-thyristor) which
complement Teccor's line of power SCRs. This group of
packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with
gate sensitivities of 12 µA to 500 µA. For gate currents in the
10 mA to 50 mA ranges, see “SCRs” section of this catalog.
The TO-220 and TO-92 are electrically isolated where the case
or tab is internally isolated to allow the use of low-cost assembly
and convenient packaging techniques.
Teccor's line of SCRs features glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Teccor's glass offers a rugged, reliable barrier against junction
contamination.
Tape-and-reel packaging is available for the TO-92 package.
Consult the factory for more information.
Variations of devices covered in this data sheet are available for
custom design applications. Consult the factory for more
information.
(0.8 A to 10 A)
Features
• Electrically-isolated TO-220 package
• High voltage capability — up to 600 V
• High surge capability — up to 100 A
• Glass-passivated chip
Compak Features
• Surface mount package — 0.8 A series
• New small-profile three-leaded Compak package
• Four gate sensitivities available
• Packaged in embossed carrier tape with 2,500
devices per reel
• Can replace SOT-223
©2002 Teccor Electronics
Thyristor Product Catalog
E5 - 1
http://www.teccor.com
+1 972-580-7777

1 page




S6004VS1 pdf
Data Sheets
Sensitive SCRs
VGT
(4) (12) (22)
IH
(5) (19)
IGM
(17)
VGRM
PGM
(17)
PG(AV)
ITSM
(6) (13)
dv/dt
di/dt
tgt tq
(8) (9)
l2t
TC =
-40 °C
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
TC =
25 °C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
TC =
110 °C
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
mAmps
MAX
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
Amps
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
MIN
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
Watts
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Watts
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Volts/µSec
Amps
60/50 Hz
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
TC = 110 °C
TYP
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
Amps/µSec
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
µSec
TYP
4
4
4
5
5
5
4
4
4
5
5
5
4
4
4
5
5
5
µSec
MAX
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
Amps2Sec
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
Electrical Specifications Notes
(1) See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2) See Figure E5.10 for IGT versus TC or TL.
(3) See Figure E5.11 for instantaneous on-state current (iT) versus on-
state voltage (vT) TYP.
(4) See Figure E5.12 for VGT versus TC or TL.
(5) See Figure E5.13 for IH versus TC or TL.
(6) For more than one full cycle, see Figure E5.14.
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 µs minimum,
15 µs maximum. See Figure E5.20 and Figure E5.21.
(8) See Figure E5.15 for tgt versus IGT.
(9) Test conditions as follows:
– TC or TL £80 °C, rectangular current waveform
– Rate-of-rise of current £10 A/µs
– Rate-of-reversal of current £5 A/µs
– ITM = 1 A (50 µs pulse), Repetition Rate = 60 pps
– VRRM = Rated
– VR = 15 V minimum, VDRM = Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/µs
– Gate Bias = 0 V, 100 W (during turn-off time interval)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 APK; T106/T107 devices are 4 APK.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) VD = 6 V dc, RL = 100 W (See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) IGT = 500 µA maximum at TC = -40 °C for T106 devices
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices
(17) Pulse Width £10 µs
(18) IGT = 350 µA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher IGT types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) TC or TL = TJ for test conditions in off state
(21) IDRM and IRRM = 50 µA for 2N5064 and 100 µA for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) TC = 110 °C
©2002 Teccor Electronics
Thyristor Product Catalog
E5 - 5
http://www.teccor.com
+1 972-580-7777

5 Page





S6004VS1 arduino
Data Sheets
180
160
140 1 Hz
120
12 Hz
100
80 60 Hz
60
ITM
40
20 tW
tW = 5 TIME CONSTANTS
0.8 A to 4 A
0
1.0
3.0 5.0 7.0 10
30 50 70 100
Peak Current Duration (tW) – µs
Figure E5.20 Peak Repetitive Capacitor Discharge Current
180
160
140
120 1 Hz
100
80 12 Hz
60
40 ITM
tW
20
0.8 A to 4 A
60 Hz
0
1.0
3.0 5.0 7.0 10
30 50 70 100
Peak Current Duration (tW) – µs
Figure E5.21 Peak Repetitive Sinusoidal Curve
Sensitive SCRs
©2002 Teccor Electronics
Thyristor Product Catalog
E5 - 11
http://www.teccor.com
+1 972-580-7777

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