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PDF S5295G Data sheet ( Hoja de datos )

Número de pieza S5295G
Descripción High Speed Rectifier Applications (fast recovery)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! S5295G Hoja de datos, Descripción, Manual

S5295B,S5295G,S5295J
TOSHIBA Fast Recovery Diode Silicon Diffused Type
S5295B, S5295G, S5295J
High Speed Rectifier Applications (fast recovery)
Unit: mm
· Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C)
· Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
· Reverse Recovery Time: 1.5 µs
· Plastic Mold Type.
Maximum Ratings
Characteristics
Repetitive peak
reverse voltage
S5295B
S5295G
S5295J
Reverse voltage
(DC)
S5295B
S5295G
S5295J
Average forward current (Ta = 50°C)
Peak one cycle surge forward current
(non repetitive)
Junction temparature
Storage temparature range
Symbol
VRRM
VR
IF (AV)
IFSM
Tj
Tstg
Rating
100
400
600
75
300
500
0.5
30 (50 Hz)
33 (60 Hz)
-40 to 125
-40 to 125
Unit
V
V
A
A
°C
°C
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery voltage
VFM
IFM = 1.0 A
¾ ¾ 1.5 V
IRRM
VRRM = Rated
¾ ¾ 10 mA
trr IF = 20 mA, IR = 1 mA
¾ ¾ 1.5 ms
Vfr
IF = 100 mA, tr = 100 ns, tw = 5 ms
¾
¾
10
V
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
1 2002-01-23

1 page





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