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PDF S40B Data sheet ( Hoja de datos )

Número de pieza S40B
Descripción 64M bit Synchronous DRAM
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



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PC133 SDRAM (Rev.0.5)
Oct. '99
64M bit Synchronous DRAM
MITSUBISHI LSIs
M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)
PRELIMINARY
Some of contents are described for general products and are
subject to change without notice.
DESCRIPTION
M2V64S20BTP is organized as 4-bank x4,194,304-word x 4-bit,and M2V64S30BTP is organized
as 4-bank x 2097152-word x 8-bit ,and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit
Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of
CLK. M2V64S20BTP,M2V64S30BTP,M2V64S40BTP achieves very high speed data rates up to
133MHz, and is suitable for main memory or graphic memory in computer systems.
FEATURES
ITEM
tCLK Clock Cycle Time
(Min.)
tRAS Active to Precharge Command Period
(Min.)
tRCD Row to Column Delay
(Min.)
tAC Access Time from CLK
(Max.) (CL=3)
tRC Ref/Active Command Period
Icc1 Operation Current (Max.) [Single Bank]
(Min.)
Icc6 Self Refresh Current
(Max.)
M2V64S20TP
M2V64S30TP
M2V64S40TP
-6
7.5ns
45ns
20.0ns
5.4ns
67.5ns
120mA
1mA
- Single 3.3V ±0.3V power supply
- Max. Clock frequency -6 : 133MHz [PC133<3-3-3> ]
- Fully synchronous operation referenced to clock rising edge
- 4-bank operation controlled by BA0,BA1(Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/FP (programmable)
- Burst type- Sequential and interleave burst (programmable)
- Random column access
- Auto precharge / All bank precharge controlled by A10
- Auto and self refresh
- 4096 refresh cycles /64ms
- LVTTL Interface
- Package 400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch
MITSUBISHI ELECTRIC
1

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S40B pdf
PC133 SDRAM (Rev.0.5)
Oct. '99
64M bit Synchronous DRAM
MITSUBISHI LSIs
M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)
BASIC FUNCTIONS
The M2V64S20(30,40)BTP provides basic functions, bank (row) activate, burst read / write,
bank (row) precharge, and auto / self refresh.
Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In
addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and
precharge option, respectively. To know the detailed definition of commands, please see the
command truth table.
CLK
/CS Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command define basic commands
/WE
Command
CKE
Refresh Option @refresh command
A10 Precharge Option @precharge or read/write command
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the
burst read (auto-precharge,READA).
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be
written is set by burst length. When A10 =H at this command, the bank is deactivated after the
burst write (auto-precharge, WRITEA).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates
burst read /write operation. When A10 =H at this command, both banks are deactivated
(precharge all, PREA).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are
generated inter-nally. After this command, the banks are precharged automatically.
MITSUBISHI ELECTRIC
5

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S40B arduino
PC133 SDRAM (Rev.0.5)
Oct. '99
64M bit Synchronous DRAM
MITSUBISHI LSIs
M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)
FUNCTION TRUTH TABLE for CKE
CKE CKE
Current State
n-1 n
SELF-
REFRESH*1
H
L
X
H
LH
LH
LH
LH
LL
POWER
DOWN
HX
LH
LL
ALL BANKS H H
IDLE*2
HL
HL
HL
HL
HL
HL
LX
ANY STATE
other than
listed above
H
H
L
H
L
H
LL
/CS /RAS /CAS /WE
XX XX
HX XX
LHHH
L HH L
LH L X
L L XX
XX XX
XX XX
XX XX
XX XX
XX XX
L LLH
HX XX
LHHH
L HH L
LH L X
L L XX
XX XX
XX XX
XX XX
XX XX
XX XX
Add Action
X INVALID
X Exit Self-Refresh (Idle after tRC)
X Exit Self-Refresh (Idle after tRC)
X ILLEGAL
X ILLEGAL
X ILLEGAL
X NOP (Maintain Self-Refresh)
X INVALID
X Exit Power Down to Idle
X NOP (Maintain Self-Refresh)
X Refer to Function Truth Table
X Enter Self-Refresh
X Enter Power Down
X Enter Power Down
X ILLEGAL
X ILLEGAL
X ILLEGAL
X Refer to Current State =Power Down
X Refer to Function Truth Table
X Begin CLK Suspend at Next Cycle*3
X Exit CLK Suspend at Next Cycle*3
X Maintain CLK Suspend
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
NOTES:
1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup
time must be satisfied before any command other than EXIT.
2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.
3. Must be legal command.
MITSUBISHI ELECTRIC
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