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PDF IDT7187S85DB Data sheet ( Hoja de datos )

Número de pieza IDT7187S85DB
Descripción CMOS STATIC RAM 64K (64K x 1-BIT)
Fabricantes Integrated Device Technology 
Logotipo Integrated Device Technology Logotipo



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Integrated Device Technology, Inc.
CMOS STATIC RAM
64K (64K x 1-BIT)
IDT7187S
IDT7187L
FEATURES:
• High speed (equal access and cycle time)
— Military: 25/35/45/55/70/85ns (max.)
• Low power consumption
• Battery backup operation—2V data retention (L version
only)
• JEDEC standard high-density 22-pin ceramic DIP, 22-pin
leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• Separate data input and output
• Input and output directly TTL-compatible
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high-
performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.
Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—ISB and ISB1. ISB
provides low-power operation; ISB1 provides ultra-low-power
operation. The low-power (L) version also provides the capa-
bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30µW.
Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
A
A
A ROW
SELECT
A
A
A
CS
DATAIN
65,536-BIT
MEMORY ARRAY
VCC
GND
COLUMN I/O
DATAOUT
WE
AAAAAAA
2986 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391. 6.2
AUGUST 1996
2986/7
1

1 page




IDT7187S85DB pdf
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2986 tbl 10
5V
DATAOUT
255
480
30pF*
MILITARY TEMPERATURE RANGE
DATAOUT
255
5V
480
5pF*
2986 drw 05
Figure 1. AC Test Load
*Includes scope and jig capacitances
2986 drw 06
Figure 2. AC Test Load
(for tHZ, tLZ, tWZ and tOW)
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)
7187S25 7187S35/45(1) 7187S55(1) 7187S70(1)
7187L25 7187L35/45(1) 7187L55(1) 7187L70(1)
7187S85(1)
7187L85(1)
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle
tRC Read Cycle Time
25 — 35/45 — 55 — 70 — 85 — ns
tAA Address Access Time
— 25 — 35/45 — 55 — 70 — 85 ns
tACS Chip Select Access Time
— 25 — 35/45 — 55 — 70 — 85 ns
tOH
tLZ(2)
tHZ(2)
tPU(2)
tPD(2)
Output Hold from Address Change
Output Selection to Output in Low-Z
Chip Deselect to Output in High-Z
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
5 — 5 — 5 — 5 — 5 — ns
5 — 5 — 5 — 5 — 5 — ns
— 12 — 17/20 — 30 — 30 — 40 ns
0 — 0 — 0 — 0 — 0 — ns
— 20 — 30/35 — 35 — 35 — 40 ns
NOTES:
1. –55°C to +125°C temperature range only.
2. This parameter guaranteed but not tested.
2986 tbl 11
6.2 5

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