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PDF INA-01100 Data sheet ( Hoja de datos )
| Número de pieza | INA-01100 | |
| Descripción | Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier | |
| Fabricantes | Agilent(Hewlett-Packard) | |
| Logotipo | .gif "Agilent(Hewlett-Packard)"){kind=logo} |
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Low Noise, Cascadable
Silicon␣ Bipolar MMIC Amplifier
Technical Data
INA-01100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
1.7 dB Typical at 100 MHz
• High Gain:
32.5 dB Typical at 100 MHz
• 3 dB Bandwidth:
DC to 500␣ MHz
• Unconditionally Stable
(k>1)
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
Chip Outline[1]
RF
OUT
GND
2
Description
The INA-01100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1]
GND
1
RF
IN
Note:
1. See Application Note, “A005: Transistor
Chip Use” for additional information.
Typical Biasing Configuration
VCC
RFC (Optional)
RF IN
Cblock
4
3
1
2
Rbias
Cblock
Vd = 5.5 V
(Nominal)
RF OUT
5965-9561E
6-84
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet INA-01100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| INA-01100 | Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier | Agilent(Hewlett-Packard) |
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