PDF ILQ621 Data sheet ( Hoja de datos )

Número de pieza	ILQ621
Descripción	MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! DUAL CHANNEL ILD621/621GB QUAD CHANNEL ILQ621/621GB MULTI-CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Alternate Source to TLP621-2/-4 and TLP621GB-2/-4 • Current Transfer Ratio (CTR) at IF= 5 mA ILD/Q621: 50% Min. ILD/Q621GB: 100% Min. • Saturated Current Transfer Ratio (CTRSAT) at IF=1 mA ILD/Q621: 60% Typ. ILD/Q621GB: 30% Min. • High Collector-Emitter Voltage, BVCEO=70 V • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Isolation Test Voltage from Double Molded Package, 5300 VACRMS • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Forward Current ...........................................60 mA Surge Current .................................................1.5 A Power Dissipation.......................................100 mW Derate from 25°C ................................1.33 mW/°C Detector Collector-Emitter Reverse Voltage ...................70 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)..........................100 mA Power Dissipation.......................................150 mW Derate from 25°C .................................... –2 mW/°C Package Isolation Test Voltage (t=1 sec.) ......................................... 7500 VACPK (t=1 min.) ....................................... 5300 VACRMS Package Dissipation ILD620/GB............... 400 mW Derate from 25°C ...............................5.33 mW/°C Package Dissipation ILQ620/GB ..............500 mW Derate from 25°C ...............................6.67 mW/°C Creepage ............................................... 7 mm min. Clearance............................................... 7 min min. Isolation Resistance VIO=500 V, TA=25°C ............................... ≥1012 Ω VIO=500 V, TA=100°C ............................. ≥1011 Ω Storage Temperature................... –55°C to +150°C Operating Temperature ................–55°C to +100°C Junction Temperature.................................... 100°C Soldering Temperature (2 mm from case bottom) .......................... 260°C Dimensions in inches (mm) 43 21 Pin One I.D. .268 (6.81) .255 (6.48) 56 78 .390 (9.91) .379 (9.63) Anode 1 Cathode 2 Cathode 3 Anode 4 8 Emitter 7 Collector 6 Collector 5 Emitter 4° Typ. .022 (.56) .018 (.46) .045 (1.14) .030 (.76) .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) .100 (2.54) Typ. .268 (6.81) .255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) 4° Typ. .022 (.56) .018 (.46) .100 (2.54) Typ. .305 typ. (7.75) typ. 10° Typ. 3°–9° .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) Pin One I.D. Anode 1 Cathode 2 Cathode 3 Anode 4 Anode 5 Cathode 6 Cathode 7 Anode 8 16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 Emitter .305 typ. (7.75) typ. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 10° Typ. 3°–9° .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) DESCRIPTION The ILD/Q621 and ILD/Q621GB are multi-channel phototransistor optocou- plers that use GaAs IRLED emitters and high gain NPN silicon phototransis- tors. These devices are constructed using over/under leadframe optical coupling and double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC. The ILD/Q621GB is well suited for CMOS interfacing given the CTRCEsat of 30% minimum at IF of 1 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100% at 5 mA. The ILD/Q621 has a guaranteed CTRCE of 50% minimum at 5 mA. The TRansparent IOn Shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present. 5–1 1 page

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