PDF ILD610-2 Data sheet ( Hoja de datos )

Número de pieza	ILD610-2
Descripción	DUAL PHOTOTRANSISTOR OPTOCOUPLER
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! ILD610 SERIES DUAL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Dual Version of SFH610 Series • High Current Transfer Ratios ILD610-1, 40-80% ILD610-2, 63-125% ILD610-3, 100-200% ILD610-4, 160-320% • Isolation Test Voltage, 5300 VRMS • VCEsat 0.25 (≤0.4) V at IF=10 mA, IC=2.5 mA • VCEO=70 V • Underwriters Lab File #E52744 • V VDE #0884 Available with Option 11 DE DESCRIPTION The ILD610 Series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN pho- totransistor. Signal information, including a DC level, can be transmitted by the device while main- taining a high degree of electrical isolation between input and output. The ILD610 Series is the dual ver- sion of SFH610 Series and uses a repetitive pin-out conﬁguration instead of the more common alternat- ing pin-out used in most dual couplers. Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Surge Forward Current (t £10 ms)...................1.5 A Total Power Dissipation ..............................100 mW Derate Linearly from 25°C......................1.3 mW/°C DC Forward Current ......................................60 mA Detector Collector-Emitter Voltage..................................70 V Collector Current ..........................................50 mA Collector Current (t ≤1 ms) ..........................100 mA Total Power Dissipation ..............................150 mW Derate Linearly from 25°C......................2.0 mW/°C Package Isolation Test Voltage (t=1 sec.) ........ 5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C ............................... ≥1012 Ω VIO=500 V, TA=100°C ............................. ≥1011 Ω Storage Temperature ...................–55°C to +150°C Operating Temperature ...............–55°C to +100°C Junction Temperature ................................... 100°C Lead Soldering Time at 260°C .................... 10 sec. Dimensions in inches (mm) 43 Pin One I.D. 21 Anode 1 8 Emitter .268 (6.81) .255 (6.48) 56 78 .390 (9.91) .379 (9.63) Cathode 2 Anode 3 Cathode 4 7 Collector 6 Emitter 5 Collector .045 (1.14) .150 (3.81) .030 (.76) .130 (3.30) .305 Typ. (7.75) Typ. 4° Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 10 ° Typ. 3°–9° .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) Electrical Characteristics (TA=25°C) Symbol Typ. Unit Condition Emitter Forward Voltage Reverse Current Capacitance VF 1.25 V IF=60mA (≤1.65) IR 0.01 (≤10) µA VR=6V CO 25 pF VR=0 V, f=1 MHz Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current BVCEO BVCEO ICEO 90 (≥70) 7.0 (≥6.0) 2 (≤50) V V nA IC=10 µA IE=10 µA VCE=10 V Capacitance CCE 7 pF VCE=5 V, f=1 MHz Package Collector-Emitter Saturation Voltage Coupling Capacitance VCEsat CC 0.25 (≤0.40) 0.35 V IF=10 mA, IC=2.5 mA pF 5–1 1 page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
ILD610-1	DUAL PHOTOTRANSISTOR OPTOCOUPLER	Siemens Semiconductor Group
ILD610-2	DUAL PHOTOTRANSISTOR OPTOCOUPLER	Siemens Semiconductor Group
ILD610-3	DUAL PHOTOTRANSISTOR OPTOCOUPLER	Siemens Semiconductor Group
ILD610-4	DUAL PHOTOTRANSISTOR OPTOCOUPLER	Siemens Semiconductor Group

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