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PDF ILD223 Data sheet ( Hoja de datos )

Número de pieza ILD223
Descripción DUAL PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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ILD223
DUAL PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• Two Channel Optocoupler
• High Current Transfer Ratio at IF=1 mA,
500% Min.
• Isolation Test Voltage, 2500 VRMS
• Electrical Specifications Similar to Standard
6-pin Coupler
• Compatible with Dual Wave, Vapor Phase and
IR Reflow Soldering
• Industry Standard SOIC-8 Surface Mountable
Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option (Conforms
to EIA Standard 481-2)
• Underwriters Lab File #E52744
DESCRIPTION
The ILD223 is a high current transfer ratio (CTR)
optocoupler. It has a Gallium Arsenide infrared LED
emitter and a silicon NPN photodarlington transis-
tor detector.
This device has CTRs tested at an LED current of
1 mA. This low drive current permits easy interfac-
ing from CMOS to LSTTL or TTL.
The ILD223 is constructed in a standard SOIC-8
foot print which makes it ideally suited for high den-
sity applications. In addition to eliminating through-
holes requirements, this package conforms to stan-
dards for surface mounted devices.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage .....................................6.0 V
Peak Pulsed Current (1 µs, 300 pps) .................3 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25°C............................45 mW
Derate Linearly from 25°C......................0.4 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Power Dissipation per Channel................... 75 mW
Derate Linearly from 25°C......................3.1 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(2 LEDs + 2 Detectors, 2 Channels).......240 mW
Derate Linearly from 25°C.........................2 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
.004 (.10)
.008 (.20)
Pin 1
Anode 1
CL
.154±.005
(3.91±.13)
Cathode
Anode
2
3
.016 (.41)
Cathode 4
.192±.005
(4.88±.13)
.015±.002
(.38±.05)
40°
8 Collector
7 Emitter
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.008 (.20)
.050 (1.27) Typ. .020±.004
.040 (1.02)
(.15±.10)
2 Plcs.
5° Max.
R.010
(.25) Max.
.125±.005
(3.18±.13)
Lead
Coplanarity
±.001 (.04)
Max.
Characteristics (TA=25°C)
Symbol Min. Typ. Max.
Emitter
Forward Voltage
Reverse Current
Capacitance
VF
IR
CO
1.3
0.1 100
25
Unit
V
µA
pF
Detector
Breakdown
Voltage
Collector-Emitter
Emitter-Collector
Current,
Collector-Emitter
Capacitance,
Collector-Emitter
Package
DC Current
Transfer Ratio
Saturation
Voltage,
Collector-Emitter
Capacitance,
Input to Output
Resistance,
Input to Output
Turn-On Time
Turn-Off Time
Isolation Test
Voltage
BVCEO
BVECO
ICEO
CCE
CTRDC
VCEsat
CIO
RIO
tON
tOFF
VIO
30
5
3.4
500
0.5
100
15
30
50
1
pF
G
µs
µs
V
V
nA
pF
%
V
Condition
IF=1 mA
VR=6.0 V
VF=0 V,
F=1 MHz
IC=10 mA
IE=10 mA
VCE=5 V,
IF=0
VCE=5 V
IF=1 mA,
VCE=5 V
IF=1 mA,
ICE=0.5 mA
VCC=10 V
RL=100
IF=5 mA
(t=1 min.)
2500 VACRMS
5–1

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