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PDF KTC3209 Data sheet ( Hoja de datos )
| Número de pieza | KTC3209 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER/ POWER SWITCHING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=1A)
High Speed Switching Time : tstg=1.0 S(Typ.)
Complementary to KTA1281.
KTC3209
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
50
50
5
2
-2
1
150
-55 150
UNIT
V
V
V
A
A
W
www.DataSheet.co.kr
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=50V, IE=0
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO IE=100mA, IB=0
DC Current Gain
hFE (1) (Note) VCE=2V, IC=0.5A (Note)
hFE (2) (Note) VCE=2V, IC=1.5A
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=0.05A
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=0.05A
Transition Frequency
fT VCE=2V, IC=0.5A
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE Classification 0:70 140, Y:120 240
2005. 12. 2
Revision No : 1
MIN.
-
-
50
5
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
100
30
MAX.
0.1
0.1
-
-
240
-
0.5
1.2
-
-
UNIT
A
A
V
V
V
V
MHz
pF
- 0.1 -
- 1.0 -
S
- 0.1 -
1/3
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTC3209.PDF ] | |
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