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PDF KST5551 Data sheet ( Hoja de datos )
| Número de pieza | KST5551 | |
| Descripción | Amplifier Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST5551
Amplifier Transistor
• Collector-Emitter Voltage: VCEO=160V
• Collector Power Dissipation: PC (max)=350mW
3
2
SOT-23
1 Mark: G1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
PC Collector Power Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
• Refer to 2N5551 for graphs
Value
180
160
6
600
350
150
-55 ~ 150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE (sat) Collector-Emitter Saturation Voltage
VBE (sat) Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA,
f=100MHz
Cob Output Capacitance
NF Noise Figure
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=250µA, RS=1KΩ,
f=10Hz to 15.7KMz
Min.
180
160
6
80
80
30
100
Units
V
V
V
mA
mW
°C
°C
Max.
50
50
Units
V
V
V
nA
nA
250
0.15
0.2
1
1
300
V
V
V
V
MHz
6 pF
8 dB
©2003 Fairchild Semiconductor Corporation
Rev. B2, February 2003
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KST5551.PDF ] | |
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