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PDF KST5179 Data sheet ( Hoja de datos )
| Número de pieza | KST5179 | |
| Descripción | RF Amplifier Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST5179
RF Amplifier Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (Ta=25°C)
Derate above 25°C
TJ
TSTG
Junction Temperature
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
20
12
2.5
50
350
2.8
150
-55 ~ 150
Units
V
V
V
mA
mW
mW/°C
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
hfe
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
GPE Power Gain
IC=0.01mA, IE=0
IC=3mA, IB=0
IE=0.01mA, IC=0
VCB=15V, IE=0
VCE=1V, IC=3mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=6V, IC=5mA, f=100MHz
VCB=10V, IE=0, f=0.1MHz to 1MHz
VCE=6V, IC=2mA, f=1KHz
VCE=6V, IC=1.5mA, f=200MHz
RS=50Ω
VCE=6V, IC=5mA, f=200MHz
Min.
20
12
2.5
25
900
25
15
Max.
0.02
Units
V
V
V
µA
0.4 V
1V
MHz
1 pF
4.5 dB
dB
Marking
7H
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KST5179.PDF ] | |
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