(PDF) KST13 Datasheet - Darlington Amplifier Transistor

Número de pieza	KST13
Descripción	Darlington Amplifier Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! KST13/14 Darlington Amplifier Transistor 3 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCES VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 2 SOT-23 1 1. Base 2. Emitter 3. Collector Value 30 30 10 300 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCES ICBO IEBO hFE Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KST13 : KST14 : KST13 : KST14 IC=100µA, VBE=0 VCB=30V, IE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=100mA VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA f=100MHz Min. 30 Max. 100 100 Units V nA nA 5K 10K 10K 20K 1.5 V 2.0 V 125 MHz Marking Code Type Mark KST13 1M Marking KST14 1N 1M ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 1 page

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PDF KST13 Data sheet ( Hoja de datos )