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PDF KSP56 Datasheet ( Hoja de datos )

Número de pieza KSP56
Descripción PNP Epitaxial Silicon Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo

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KSP56 Hoja de datos, Descripción, Manual
KSP55/56
Amplifier Transistor
• Collector-Emitter Voltage: VCEO=KSP55: 60V
KSP56: 80V
• Collector Power Dissipation: PC (max) =625mW
• Complement to KSP05/06
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSP55
: KSP56
VCEO
Collector-Emitter Voltage
: KSP55
: KSP56
VCEO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Emitter 2. Base 3. Collector
Value
-60
-80
-60
-80
-4
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
* Collector-Emitter Breakdown Voltage
: KSP55
: KSP56
IC= -1mA, IB=0
BVEBO
ICBO
ICEO
h FE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP55
: KSP56
Collector Cut-off Current
DC Current Gain
VCE (sat)
VBE (on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW300µs, Duty Cycle2%
IE= -100µA, IC=0
VCB= -60V, IE=0
VCB= -80V, IE=0
VCE= -60V, IB=0
VCE= -1V, IC= -10mA
VCE= -1V, IC= -100mA
IC= -100mA, IB= -10mA
VCE= -1V, IC= -100mA
VCE= -2V, IC= -10mA
f=100MHz
Min. Max. Units
-60 V
-80
-4 V
-0.1 µA
-0.1 µA
-0.1 µA
50
50
-0.25
V
-1.2 V
50 MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

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