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PDF KSP2222A Data sheet ( Hoja de datos )
| Número de pieza | KSP2222A | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KSP2222A
General Purpose Transistor
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Refer KSP2222 for graphs
NPN Epitaxial Silicon Transistor
1 TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Collector-Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=3V, IC=0
IC=0.1mA, VCE=10V
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, *IC=150mA
VCE=10V, *IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=20V, IC=20mA
f=100MHz
Cob Output Capacitance
tON Turn On Time
tOFF
Turn Off Time
NF Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2222A
VCB=10V, IE=0, f=1MHz
VCC=30V, IC=150mA
IB1=15mA, VBE(off)=0.5V
VCC=30V, IC=150mA
IB1=IB2=15mA
IC=100µA, VCE=10V
RS=IKΩ, f=1KHz
Value
75
40
6
600
625
150
-55 ~ 150
Min.
75
40
6
Typ.
35
50
75
100
40
0.6
300
Units
V
V
V
mA
mW
°C
°C
Max.
0.01
10
Units
V
V
V
µA
nA
300
0.3 V
1V
1.2 V
2V
MHz
8 pF
35 ns
285 ns
4 dB
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KSP2222A.PDF ] | |
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