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PDF KSP05 Datasheet ( Hoja de datos )

Número de pieza KSP05
Descripción Amplifier Transistor
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo

Total 4 Páginas
		
KSP05 Hoja de datos, Descripción, Manual
KSP05/06
Amplifier Transistor
• Collector-Emitter Voltage: VCEO = KSP05: 60V
KSP06: 80V
• Collector Dissipation: PC (max)=625mW
• Complement to KSP55/56
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector Base Voltage
: KSP05
: KSP06
VCEO
Collector-Emitter Voltage
: KSP05
: KSP06
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
1 TO-92
1. Emitter 2. Base 3. Collector
Value
60
80
60
80
4
500
625
150
-55~150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector-Emitter Breakdown Voltage
: KSP05
: KSP06
IC=1mA, IB=0
BVEBO
ICBO
ICEO
hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP05
: KSP06
Collector Cut-off Current
DC Current Gain
VCE (sat)
VBE (on)
fT
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW300µs, Duty Cycle2%
IE=100µA, IC=0
VCB=60V, IE=0
VCB=80V, IE=0
VCE=60V, IB=0
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=2V, IC=10mA
f=100MHz
Min.
60
80
4
50
50
100
Max. Units
V
V
V
0.1 µA
0.1 µA
0.1 µA
0.25 V
1.2 V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002

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