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PDF KSH42C Data sheet ( Hoja de datos )

Número de pieza KSH42C
Descripción General Purpose Amplifier Low Speed Switching Applications
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! KSH42C Hoja de datos, Descripción, Manual

KSH42C
General Purpose Amplifier
Low Speed Switching Applications
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP42C
1 D-PAK 1 I-PAK
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
-100
-100
-5
-6
-10
-2
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
ICEO
ICES
IEBO
hFE
* Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
VCE(sat)
* Collector-Emitter Saturation Voltage
VBE(on)
* Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW300µs, Duty Cycle2%
IC = - 30mA, IB = 0
VCE = -60V, IB = 0
VCE = -100V, VBE = 0
VBE = -5V, IC = 0
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
IC = -6A, IB = -600mA
VCE = -6A, IC = -4A
VCE = -10V, IC = -500mA
Min.
-100
30
15
3
Max.
-50
-10
-0.5
Units
V
µA
µA
mA
75
-1.5 V
-2 V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002

1 page




KSH42C pdf
Package Dimensions (Continued)
(0.50)
6.60 ±0.20
5.34 ±0.20
(4.34)
I-PAK
(0.50)
2.30 ±0.20
0.50 ±0.10
MAX0.96
0.76 ±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
0.50 ±0.10
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A4, October 2002

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