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PDF KSE45H8 Data sheet ( Hoja de datos )
| Número de pieza | KSE45H8 | |
| Descripción | General Purpose Power Switching Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSE45H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A
• Fast Switching Speeds
• Complement to KSE44H
1 TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: KSE45H 1,2
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
VEBO
IC
ICP
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
- 30
- 45
- 60
- 80
-5
- 10
- 20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
VCE = Rated, VCEO, VEB = 0
VEB = - 5V, IC = 0
VCE = - 1V, IC = - 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
VBE(sat)
*Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW≤300µs, Duty cycle≤2%
IC = - 8A, IB = - 0.8A
IC = - 8A, IB = - 0.4A
IC = - 8A, IB = - 0.8A
VCE = - 10V, IC = - 0.5A
VCB = - 10V, f = 1MHz
VCC =20V, IC = - 5A
IB1 = - IB2 = - 0.5A
Min.
35
60
Typ.
40
230
135
500
100
Max.
-10
-100
Units
µA
µA
-1 V
-1 V
-1.5 V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSE45H8.PDF ] | |
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