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PDF KSE3055T Datasheet ( Hoja de datos )

Número de pieza KSE3055T
Descripción General Purpose and Switching Applications
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo

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KSE3055T Hoja de datos, Descripción, Manual
KSE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
70
60
5
10
6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICEO
ICEX1
ICEX2
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
IEBO
hFE
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE (on)
*Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse test: PW300µs, duty cycle2% Pulse
IC = 200mA, IB = 0
VCE = 30V, IB = 0
VCE = 70V, VBE(off) = -1.5V
VCE = 70V, VBE(off) = -1.5V
@ TC = 150°C
VEB = 5V, IC = 0
VCE = 4V, IC = 4A
VCE = 4V, IC = 10A
IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A
VCE = 4V, IC = 4A
VCE = 10V, IC = 500mA
Min.
60
Max.
700
1
5
Units
V
µA
mA
mA
5 mA
20 100
5
1.1 V
8V
1.8 V
2 MHz
©2000 Fairchild Semiconductor International
Rev. A1, December 2000

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