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PDF KSD560 Data sheet ( Hoja de datos )
| Número de pieza | KSD560 | |
| Descripción | Low Frequency Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de KSD560 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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KSD560
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
• Complement to KSB601
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current
PC Collector Dissipation (Ta=25°C)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
hFE1
hFE2
*DC Current Gain
VCE(sat) *Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter SaturationVoltage
tON Turn ON Time
tSTG
Storage Time
fT Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
VCB = 100V, IE = 0
VCE = 2V, IC = 3A
VCE = 2V, IC = 5A
IC = 3A, IB = 3mA
IC = 3A, IB = 3mA
VCC ⋅=⋅ 50V, IC = 3A
IB1 = - IB2 = 3mA
RL = 16.7Ω
Value
150
100
7
5
8
0.5
1.5
30
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
2K
500
Typ.
6K
0.9
1.6
1
3.5
1.2
Max.
1
15K
Units
µA
1.5 V
2V
µs
µs
µs
hFE Classification
Classification
hFE1
R
2000 ~ 5000
O
3000 ~ 7000
Y
5000 ~ 15000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSD560.PDF ] | |
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