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PDF KSC5405F Data sheet ( Hoja de datos )
| Número de pieza | KSC5405F | |
| Descripción | High Voltage Power Switching Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSC5405F
High Voltage Power Switching Applications
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Base Current (Pulse)
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
1000
450
9
5
10
2
4
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO (sus) *Collector-Emitter Sustaining Voltage
ICES
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage:
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulsed Test: PW = 300uS, duty cycle = 1.5%
IC = 100mA, IB = 0
VCE = 1000V, VBE = 0
VBE = 9V, IC = 0
VCE=5V, IC=0.6A
IC = 2.5A, IB = 0.5A
IC = 2.5A, IB = 0.5A
VCC = 250V, IC = 2.5A
IB1 = -IB2 = 0.5A
RL=100Ω
Min.
450
10
Typ.
Max.
1
10
40
1.5
1.3
1
4
0.8
Units
V
mA
mA
V
V
µs
µs
µs
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC5405F.PDF ] | |
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