DataSheet.es    


PDF KSC5402DT Data sheet ( Hoja de datos )

Número de pieza KSC5402DT
Descripción High Voltage High Speed Power Switch Application
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de KSC5402DT (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! KSC5402DT Hoja de datos, Descripción, Manual

KSC5402D/KSC5402DT
High Voltage High Speed Power Switch
Application
• Wide Safe Operating Area
• Built-in Free Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices; D-PAK or TO-220
Equivalent Circuit
C
B
D-PAK
1
TO-220
E1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C) : D-PAK *
: TO-220
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Value
1000
450
12
2
5
1
2
30
50
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
TL Maximum Lead Temperature for Soldering Purpose
; 1/8” from Case for 5 Seconds
* Mounted on 1” square PCB (FR4 ro G-10 Material)
Rating
TO-220
D-PAK
2.5 4.17 *
62.5 50
270 270
Unit
°C/W
°C
©2002 Fairchild Semiconductor Corporation
Rev. B2, December 2002

1 page




KSC5402DT pdf
Typical Characteristics (Continued)
10
I = 10 I
CB
1
TJ=25
TJ=125
0.1
1E-3
0.01 0.1
IC[A], COLLECTOR CURRENT
1
Figure 7. Base-Emitter Saturation Voltage
2.0
1.5
1.0
I =0.2A
C
0.5
0.4A
TJ=25
2.0A
1.5A
1.0A
0.0
1E-3
0.01 0.1
1
IC[A], COLLECTOR CURRENT
Figure 9. Typical Collector Saturation Region
10
1 TJ=25
TJ=125
0.1
0.01
0.1
IFD [A], CURRENT
1
Figure 11. Diode Forward Voltage
©2002 Fairchild Semiconductor Corporation
1000
Cib
f=1MHz
100
Cob
10
1
10 100
REVERSE VOLTAGE [V]
Figure 8. Collector Output Capacitance
550
500
450
0.0
0.5
IF [A], FORWARD CURRENT
1.0
Figure 10. Forward Recovery Time
IC=5IB1=2IB2
VCC=300V
PW=40µs
300
200
TJ=125
100 TJ=25
0.4 0.6 0.8 1.0 1.2 1.4
Ic [A], COLLECTOR CURRENT
Figure 12. Resistive Switching Time, ton
Rev. B2, December 2002

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet KSC5402DT.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
KSC5402DHigh Voltage High Speed Power Switch ApplicationFairchild Semiconductor
Fairchild Semiconductor
KSC5402DTHigh Voltage High Speed Power Switch ApplicationFairchild Semiconductor
Fairchild Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar