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PDF KSC5305D Data sheet ( Hoja de datos )
| Número de pieza | KSC5305D | |
| Descripción | High Voltage High Speed Power Switch Application | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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KSC5305D
High Voltage High Speed Power Switch
Application
Equivalent Circuit
C
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time B
spread even though corner spirit product
• Low base drive requirement
1 TO-220
E 1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
Value
800
400
12
5
10
2
4
75
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
1.65
62.5
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page  
Package Demensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2001
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KSC5305D.PDF ] | |
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