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PDF KSC5302DM Data sheet ( Hoja de datos )
| Número de pieza | KSC5302DM | |
| Descripción | High Voltage & High Speed Power Switch Application | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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KSC5302DM
High Voltage & High Speed
Power Switch Application
Equivalent Circuit
C
• High breakdown Voltage :BVCBO=800V
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time
spread even though corner spirit product
• Low base drive requirement
B
1 TO-126
E 1. Emitter 2.Collector 3.Base
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
Value
800
400
12
2
5
1
2
25
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
5.0
62.5
Unit
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, December 2002
1 page  
Package Dimensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
(1.00)
(0.50)
1.75 ±0.20
0.50
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, December 2002
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KSC5302DM.PDF ] | |
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