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PDF KSC5042F Data sheet ( Hoja de datos )
| Número de pieza | KSC5042F | |
| Descripción | High Voltage Switchihg Dynamic Focus Application | |
| Fabricantes | Fairchild Semiconductor | |
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KSC5042F
High Voltage Switchihg Dynamic Focus
Application
• High Collector-Emitter Breakdown Voltage : BVCEO=900V
• Small Cob =2.8pF (Typ.)
• Wide S.O.A
• High reliability
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
1500
900
5
100
300
6
150
- 55 ~ 150
Units
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE = 1mA, IC = 0
VCB = 900V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 10mA
IC = 20mA, IB = 4mA
IC = 20mA, IB = 4mA
VCB = 100V, f = 1MHz
Min.
1500
900
5
30
Typ.
2.8
Max.
10
10
Units
V
V
V
µA
µA
5V
2V
pF
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC5042F.PDF ] | |
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