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PDF KSC2881 Data sheet ( Hoja de datos )
| Número de pieza | KSC2881 | |
| Descripción | Power Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSC2881
Power Amplifier
• Collector-Emitter Voltage : VCEO=120V
• Current Gain Bandwidth Productor : fT=120MHz
• Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
• Complement to KSA1201
1 SOT-89
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
IB Base Current
PC Collector Power Dissipation
PC*
TJ Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2x0.8mm)
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
IC=10µA, IB=0
IE=1mA, IC=0
VCB=120V, IE=0
VBE=5V, IC=0
VCE=5V, IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=100mA
VCB=10V, IE=0, f=1MHz
hFE Classification
Classification
hFE
O
80 ~ 160
Marking
Value
120
120
5
800
160
500
1,000
150
-55 ~ 150
Units
V
V
V
mA
mA
mW
mW
°C
°C
Min.
120
5
80
Typ.
120
Max.
100
100
240
1.0
1.0
30
Units
V
V
nA
nA
V
V
MHz
pF
Y
120 ~ 240
SCX
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC2881.PDF ] | |
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