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PDF KSC1009 Data sheet ( Hoja de datos )
| Número de pieza | KSC1009 | |
| Descripción | High Voltage Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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KSC1009
High Voltage Amplifier
• High Collector-Base Voltage : VCBO=160V
• Collector Current : IC=700mA
• Collector Power Dissipation : PC=800mW
• Complement to KSA709
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1 TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
160
140
8
700
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
IC=200mA, IB=20mA
IC=200mA, IB=20mA
VCE=10V, IC=50mA
VCB=10V, IE=0, f=1MHz
Min.
160
140
8
40
30
Typ.
0.2
0.86
50
8
Max.
0.1
0.1
400
0.7
1.0
Units
V
V
V
µA
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSC1009.PDF ] | |
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