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PDF KSA708 Data sheet ( Hoja de datos )
| Número de pieza | KSA708 | |
| Descripción | Low Frequency Amplifier & Medium Speed Switching | |
| Fabricantes | Fairchild Semiconductor | |
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KSA708
Low Frequency Amplifier & Medium Speed
Switching
• Complement to KSC1008
• Collector-Base Voltage : VCBO= -80V
• Collector Power Dissipation : PC=800mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-80
-60
-8
-700
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE * DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
* Pulse Test: PW≤350µs, Duty cycle≤2%
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -60V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC= -50mA
IC= -500mA, IB= -50mA
IC= -500mA, IB= -50mA
VCE= -10V, IC= -50mA
VCB= -10V, IE=0, f=1MHz
Min.
-80
-60
-8
40
Typ.
-0.3
-0.9
50
13
Max.
-0.1
-0.1
240
-0.7
1.1
Units
V
V
V
µA
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, August 2001
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSA708.PDF ] | |
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