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PDF KSA1625 Data sheet ( Hoja de datos )
| Número de pieza | KSA1625 | |
| Descripción | High Voltage Switch | |
| Fabricantes | Fairchild Semiconductor | |
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High Voltage Switch
• High Breakdown Voltage
• High Speed Switching
KSA1625
1 TO-92
1. Emitter 2. Collector 3. Base
PNP Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IB
IC
ICP
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Power Dissipation (Ta=25°C)
Collector Power Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Ratings
-400
-400
-7
-0.25
-0.5
-1.0
0.75
2
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Dc Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
IC= -1mA, IB=0
VCB= -400V, IE=0
VEB= -5V, IC=0
VCE= -5V, IC= -50mA
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
VCE= -10V, IC= -10mA
VCB= -10V, f=1MHz
IC= -100mA, RL=1.5kΩ
IB1=- IB2= -10mA
VCC= -150V
Min.
-400
40
10
Max.
-1
-1
200
-1
-1.2
25
1
5
1
Units
V
µA
µA
V
V
MHz
pF
µs
µs
µs
hFE Classification
Classification
hFE
M
40 ~ 80
L
60 ~ 120
K
100 ~ 200
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSA1625.PDF ] | |
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