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PDF KSA1175 Data sheet ( Hoja de datos )
| Número de pieza | KSA1175 | |
| Descripción | Low Frequency Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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Low Frequency Amplifier
• Collector-Base Voltage : VCBO= -60V
• Complement to KSC2785
KSA1175
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-60
-50
-5
-150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (on)
fT
Cob
NF
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -60V, IE=0
VEB= -5V, IC=0
VCE= -6V, IC= -1mA
IC= -100mA, IB= -10mA
VCE= -6V, IE= -1mA
VCE= -6V, IC= -10mA
VCB= -10V, IE=0, f=1MHz
VCE= -6V, IC= -0.3mA
f=100Hz, RS=10KΩ
Min.
-60
-50
-5
40
-0.50
50
Typ.
-0.18
-0.62
180
2.8
6.0
Max.
-0.1
-0.1
700
-0.3
-0.80
20
Units
V
V
V
µA
µA
V
V
MHz
pF
dB
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KSA1175.PDF ] | |
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