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PDF KDV214E Data sheet ( Hoja de datos )
| Número de pieza | KDV214E | |
| Descripción | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : rS=0.4 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
VR
VRM
Tj
Storage Temperature Range
Tstg
RATING
30
35 (RL=10k )
125
-55 125
UNIT
V
V
KDV214E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60 +_0.10
1.20 +_0.10
0.80 +_0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
VR
IR
C2V
C25V
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
C(Min.)
0.025
(VR=2~25V)
TEST CONDITION
IR=1 A
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
MIN.
30
-
14.16
2.11
5.90
-
Marking
TYP.
-
-
-
-
6.50
0.4
MAX.
-
10
16.25
2.43
7.15
0.55
Type Name
UNIT
V
nA
pF
pF
-
UO
2002. 6. 14
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KDV214E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KDV214 | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING) | KEC(Korea Electronics) |
| KDV214A | SILICON EPITAXIAL PLANAR DIODE |  KEC |
| KDV214E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING) | KEC(Korea Electronics) |
| KDV214EA | SILICON EPITAXIAL PLANAR DIODE | KEC |
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