PDF KBU4A Datasheet ( Hoja de datos )

		


Discrete POWER & Signal
Technologies
KBU4A - KBU4M
Features
• High surge current capability.
• Reliable construction technique.
0.16(4.1)
0.14(3.6)
0.935(23.7)
0.895(22.7)
0.70(17.8)
0.66(16.8)
0.0760(19.3)
MAX
–
45°
+
+
~ ~+
0.085(2.2)
0.065(1.7)
0.455(11.3)
0.405(10.3)
0.280(7.1)
0.260(6.6)
• Ideal for printed circuit board.
KBU
1.0(2.54)
MIN
0.260(6.8)
0.180(4.5)
0.165(4.2)
0.150(3.8)
4.0 Ampere Silicon Bridge Rectifiers
0.220(5.6)
0.180(4.6)
Dimensions are in: inches (mm)
0.052(1.3)
0.048(1.2)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
@ TA = 50°C
Peak Forward Surge Current
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Thermal Resistance, Junction to Lead,** per leg
Storage Temperature Range
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.375 " (9.5 mm) lead length and 0.5 x 0.5" (13 x 13 mm) copper pads.
4.0
200
6.6
53
19
4.0
-55 to +150
-55 to +150
Units
A
A
W
mW /°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
4A 4B 4D 4G
Peak Repetitive Reverse Voltage
50 100 200 400
Maximum RMS Bridge Input Voltage
35
70 140 280
DC Reverse Voltage (Rated VR)
Maximum Reverse Leakage,
total bridge @ rated VR TA = 25°C
TA = 100°C
Maximum Forward Voltage Drop,
per bridge
@ 4.0 A
50 100 200 400
5.0
500
1.0
4J
600
420
600
Units
4K 4M
800 1000
560 700
800 1000
V
V
V
µA
µA
V
1998 Fairchild Semiconductor Corporation
KBU4A-KBU4M, Rev. A

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