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PDF KM48C2000B Data sheet ( Hoja de datos )

Número de pieza KM48C2000B
Descripción 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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KM48C2000B, KM48C2100B
KM48V2000B, KM48V2100B
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
CMOS DRAM
DESCRIPTION
This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power con-
sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-
before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability.
It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FEATURES
¡Ü Part Identification
- KM48C2000B/B-L (5V, 4K Ref.)
- KM48C2100B/B-L (5V, 2K Ref.)
- KM48V2000B/B-L (3.3V, 4K Ref.)
- KM48V2100B/B-L (3.3V, 2K Ref.)
¡Ü Active Power Dissipation
Speed
-5
-6
-7
3.3V
4K 2K
324 396
288 360
252 324
Unit : mW
5V
4K 2K
495 605
440 550
385 495
¡Ü Refresh Cycles
Part
NO.
C2000B
V2000B
C2100B
V2100B
VCC
5V
3.3V
5V
3.3V
Refresh
cycle
4K
2K
Refresh period
Normal L-ver
64ms
32ms
128ms
¡Ü Performance Range
Speed
-5
-6
tRAC
50ns
60ns
tCAC
13ns
15ns
-7 70ns 20ns
tRC
90ns
110ns
130ns
tPC
35ns
40ns
45ns
Remark
5V/3.3V
5V/3.3V
5V/3.3V
¡Ü Fast Page Mode operation
¡Ü Byte/Word Read/Write operation
¡Ü CAS-before-RAS refresh capability
¡Ü RAS-only and Hidden refresh capability
¡Ü Self-refresh capability (L-ver only)
¡Ü Fast parallel test mode capability
¡Ü TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
¡Ü Early Write or output enable controlled write
¡Ü JEDEC Standard pinout
¡Ü Available in Plastic SOJ and TSOP(II) packages
¡Ü Single +5V¡¾10% power supply (5V product)
¡Ü Single +3.3V¡¾0.3V power supply (3.3V product)
FUNCTIONAL BLOCK DIAGRAM
RAS
CAS
W
A0-A11
(A0 - A10)*1
A0 - A8
(A0 - A9)*1
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
Row Address Buffer
Col. Address Buffer
Row Decoder
Memory Array
2,097,152 x 8
Cells
Column Decoder
Vcc
Vss
Data in
Buffer
DQ0
to
DQ7
Data out
Buffer
OE
Note) *1 : 2K Refresh
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

1 page




KM48C2000B pdf
KM48C2000B, KM48C2100B
KM48V2000B, KM48V2100B
CAPACITANCE (TA=25¡É, VCC=5V or 3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A11]
CIN1
Input capacitance [RAS, CAS, W, OE]
CIN2
Output capacitance [DQ0 - DQ7]
CDQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS (0¡É¡ÂTA¡Â70¡É, See note 1,2)
Test condition (5V device) : VCC=5.0V¡¾10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Test condition (3.3V device) : VCC=3.3V¡¾0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-5
Min Max
-6
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
tWP
tRWL
tCWL
90 110
133 155
50 60
13 15
25 30
00
0 13 0 15
3 50 3 50
30 40
50 10K 60 10K
13 15
50 60
13 10K 15 10K
20 37 20 45
15 25 15 30
55
00
10 10
00
10 10
25 30
00
00
00
10 10
10 10
13 15
13 15
-7
Min Max
130
185
70
20
35
0
0 20
3 50
50
70 10K
20
70
20 10K
20 50
15 35
5
0
10
0
15
35
0
0
0
15
15
20
20
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4,9
3,4
3,9
3
5
2
4
9
7
7

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