DataSheet.es    


PDF KM416V4100B Data sheet ( Hoja de datos )

Número de pieza KM416V4100B
Descripción 4M x 16bit CMOS Dynamic RAM with Fast Page Mode
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



Hay una vista previa y un enlace de descarga de KM416V4100B (archivo pdf) en la parte inferior de esta página.


Total 30 Páginas

No Preview Available ! KM416V4100B Hoja de datos, Descripción, Manual

KM416V4000B, KM416V4100B
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory
cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6), power consumption(Normal or Low power) are
optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Fur-
thermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs
advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM416V4000B/B-L(3.3V, 8K Ref.)
- KM416V4100B/B-L(3.3V, 4K Ref.)
Active Power Dissipation
Speed
-45
-5
-6
8K
360
324
288
Unit : mW
4K
468
432
396
Refresh Cycles
Part
NO.
KM416V4000B*
KM416V4100B
Refresh
cycle
8K
4K
Refresh time
Normal L-ver
64ms 128ms
* Access mode & RAS only refresh mode
: 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.)
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.)
Performance Range
Speed tRAC
tCAC
-45 45ns 12ns
-5 50ns 13ns
-6 60ns 15ns
tRC
80ns
90ns
110ns
tPC
31ns
35ns
40ns
• Fast Page Mode operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply
FUNCTIONAL BLOCK DIAGRAM
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Refresh Timer
Refresh Control
Refresh Counter
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Note) *1 : 4K Refresh
Row Decoder
Memory Array
4,194,304 x 16
Cells
Column Decoder
Vcc
Vss
Lower
Data in
Buffer
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
DQ0
to
DQ7
OE
DQ8
to
DQ15
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.

1 page




KM416V4100B pdf
KM416V4000B, KM416V4100B
CAPACITANCE (TA=25°C, VCC=3.3V, f=1MHz)
Parameter
Symbol
Input capacitance [A0 ~ A12]
CIN1
Input capacitance [RAS, UCAS, LCAS, W, OE]
CIN2
Output capacitance [DQ0 - DQ15]
CDQ
Min
-
-
-
CMOS DRAM
Max Units
5 pF
7 pF
7 pF
AC CHARACTERISTICS (0°CTA70°C, See note 1,2)
Test condition : VCC=3.3V±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V
Parameter
Symbol
-45
Min Max
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
tRC
tRWC
tRAC
tCAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tRAL
tRCS
tRCH
tRRH
tWCH
80
115
45
12
23
0
0 13
1 50
25
45 10K
12
45
12 10K
18 33
13 22
5
0
8
0
8
23
0
0
0
8
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
tWP
tRWL
tCWL
tDS
tDH
8
13
12
0
10
-5
Min Max
90
133
50
13
25
0
0 13
1 50
30
50 10K
13
50
13 10K
20 37
15 25
5
0
10
0
10
25
0
0
0
10
10
15
13
0
10
-6
Min Max
110
153
60
15
30
0
0 13
1 50
40
60 10K
15
60
15 10K
20 45
15 30
5
0
10
0
10
30
0
0
0
10
10
15
15
0
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,4,10
3,4,5
3,10
3
6
2
4
10
13
13
8
8
16
9,19
9,19

5 Page





KM416V4100B arduino
KM416V4000B, KM416V4100B
LOWER BYTE READ CYCLE
NOTE : DIN = OPEN
CMOS DRAM
VIH -
RAS
VIL -
VIH -
UCAS
VIL -
VIH -
LCAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
DQ0 ~ DQ7
VOH -
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tRAS
tRC
tRP
tCRP
tRPC
tCRP
tRCD
tASR
tRAD
tRAH
tASC
ROW
ADDRESS
tRCS
tCSH
tRSH
tCAS
tCAH
COLUMN
ADDRESS
tRAL
tRAC
OPEN
tAA
tOEA
tCAC
tCLZ
tRRH
tRCH
tOFF
tOEZ
DATA-OUT
OPEN
Dont care
Undefined

11 Page







PáginasTotal 30 Páginas
PDF Descargar[ Datasheet KM416V4100B.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
KM416V4100B4M x 16bit CMOS Dynamic RAM with Fast Page ModeSamsung semiconductor
Samsung semiconductor
KM416V4100C4M x 16bit CMOS Dynamic RAM with Fast Page ModeSamsung semiconductor
Samsung semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar