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PDF KH104 Data sheet ( Hoja de datos )

Número de pieza KH104
Descripción DC to 1.1GHz Linear Amplifier
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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KH104
DC to 1.1GHz Linear Amplifier
www.fairchildsemi.com
Features
s -3dB bandwidth of 1.1GHz
s 325psec rise and fall times
s 14dB gain, 50input and output
s Low distortion, linear phase
s 1.4:1 VSWR (output, DC-1.1GHz)
s Direct replacement for CLC104
Applications
s Digital and wideband analog communications
s Radar, IF and RF processors
s Fiber optic drivers and receivers
s Photomultiplier preamplifiers
Basic Circuit Diagram
+15V
39
0.01 +15V
2.2
10K
Offset
Adjust
-15V
Vin
0.01
0.01
12 14
4
1
KH104
11
3,5-10
2
Capacitance if µF
39
13
0.01
0.01
2.2
-15V
Equivalent Circuit Diagram
+VCC
1
Vo
Offset
Adjust
12
Vin 4
*Ground
+5.4V
Reg
KH104
-5.4V
Reg
14 +VR
11 Vo
13 -VR
General Description
The KH104 linear amplifier represents a significant
advance in linear amplifiers. Proprietary design
techniques have yielded an amplifier with 14dB of
gain and a -3dB bandwidth of DC to 1100MHz. Gain
flatness to 750MHz of ±0.4dB coupled with excellent
VSWR and phase linearity gives outstanding pulse
fidelity and low signal distortion.
Designed for 50systems, the KH104 is very easy to
use, requiring only properly bypassed power supplies
for operation. This translates to time and cost savings
in all stages of design and production.
Fast rise time, low overshoot and linear phase make
the KH104 ideal for high speed pulse amplification.
These properties plus low distortion combine to
produce an amplifier well suited to many communi-
cations applications. With a 1.1GHz bandwidth, the
KH104 can handle the fastest digital traffic, even
when the demodulation scheme or the digital coding
format requires that DC be maintained. It is also
ideal for traditional video amplifier applications such
as radar or wideband analog communications systems.
These same characteristics make the KH104 an excellent
choice for use in fiber optics systems, on either the
transmitting or receiving end of the fiber. The low
group delay distortion insures that pulse integrity
will be maintained. As a photomultiplier tube pre-
amp, its fast response and quick overload recovery
provide for superior system performance.
The KH104 is constructed using thin film resistor/
bipolar transistor technology, and is available in the
following versions:
KH104AI -25°C to +85°C 14-pin double-wide DIP
2
*Pins 3, 5-10 case is ground
REV. 1A February 2001

1 page




KH104 pdf
KH104
DATA SHEET
very low. As the signal frequency increases beyond f45,
the op amp loses influence and the KH104 gain and
output impedance dominate. To ensure a smooth
transition and matched gain at all frequencies, adjust Rb
for a minimum op amp output swing with a 0.1Vpp
sinewave input (to the KH104) at the frequency f45. Since
the KH104 has a 50output impedance, its
output voltage is a function of the load impedance
(Av ~_ 10RL/(RL + 50)), whereas the gain of the compos-
ite amplifier at low frequencies and DC is relatively
independent of the load impedance, due to the high
open-loop gain of the op amp. Thus, to avoid gain
mismatching and phase non-linearity, use the composite
amplifier only if the load impedance is constant from DC
to at least 10(f45).
Use of a composite amplifier reduces input offset voltage
and its corresponding drift, but has no effect on input bias
current. This current is converted to an input voltage by
the resistance to ground seen at the amplifier input and
the voltage appears, amplified, at the output. Typical
input offset voltage due to the bias current is 2mV and
input offset drift is approximately 15mV/°C.
Thermal Considerations
The KH104 case must be maintained at or below 140°C.
Note that because of the amplifier design, power dissipa-
tion remains fairly constant, independent of the load or
drive level. Therefore, standard derating is not possible.
There are two ways to keep the case temperature low.
The first is to keep the amount of power dissipated inside
the package to a minimum and the second is to get the
heat out of the package quickly by reducing the thermal
resistance from case to ambient.
A large portion of the heat dissipated inside the package
is in the voltage regulators. At the minimum +9V supply
level the regulators dissipate 390mW and at the
maximum ±16V supply level they dissipate 1.2W.
The amplifier itself dissipates a fairly constant 600mW
(55mA x 10.8V). Reducing the power dissipation of the
internal regulators will go far towards reducing the
internal junction temperatures without impacting the so
performance. Reducing either the input supply voltages
(on pins 1 and 2) and/or shunting the regulator current
through external resistors (from pins 1 to 14 and pins
2 to 13) are both effective means towards significantly
reducing the internal power dissipation. A minimum
voltage across the regulator of 3.6V and a minimum
regulator current of 10mA will satisfy the regulator
dropout voltage and current limits.
Given the maximum anticipated power supply voltages,
the shunt resistor should be calculated to yield a 35mA
current from that voltage to the regulated voltage of 5.4V.
This will leave 10mA through the regulator at the
minimum quiescent current of 45mA. The regulator input
voltages may be reduced directly by dropping the voltage
supplies, or, if that option is not available, using either
a zener or resistive dropping element in series with
the supply. If a series dropping element is used, the
decoupling capacitors must appear on pins 1 and 2 of the
KH104. Figure 3 shows two possible power reduction
circuits from fixed ±15V supplies.
Several methods of decreasing the thermal resistance
from case to ambient are possible. With no heat paths
other than still air at 25°C, the thermal resistance from
case to ambient for the KH104 is about 40°C/W. When
placed in a printed circuit board with all ground pins
soldered into a ground plane 1X 1.5, the thermal
resistance drops to about 30°C/W In this configuration,
the case rise will be 30°C for 9V supplies and 50°C
for 16V supplies. This results in maximum allowable
ambient temperatures of 110°C and 90°C, respectively. If
higher operating temperatures are required, heat sinking
of the package is recommended.
+
2.2µF
Vin
+15V
D1
5.6V
0.01µF
1
115
+
2.2µF
14
13
Vo Vin
2
115
+15V
60
0.01µF
1
2
200
14
13
Vo
200
2.2µF +
0.01µF
D2
5.6V
-15V
D1, D2 IN4734
nominal, no load Pd ~760mW
2.2µF +
0.01µF
60
-15V
nominal, no load Pd ~900mW
Figure 3: Reducing Power Dissipation
REV. 1A February 2001
5

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