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PDF 70511 Data sheet ( Hoja de datos )
| Número de pieza | 70511 | |
| Descripción | N-Channel 75-V (D-S) 200C MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SPICE Device Model SUM110N08-05
Vishay Siliconix
N-Channel 75-V (D-S) 200°C MOSFET
CHARACTERISTICS
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70511
09-Jun-04
www.vishay.com
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 70511.PDF ] | |
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