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PDF IDT54FCT16270ATPV Data sheet ( Hoja de datos )

Número de pieza IDT54FCT16270ATPV
Descripción FAST CMOS 18-BIT R/W BUFFER
Fabricantes Integrated Device Technology 
Logotipo Integrated Device Technology Logotipo



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FAST CMOS 18-BIT
R/W BUFFER
IDT54/74FCT162701T/AT
Integrated Device Technology, Inc.
FEATURES:
• 0.5 MICRON CMOS Technology
• Typical tSK(o) (Output Skew) < 250ps
• Low input and output leakage 1µA (max.)
• ESD > 2000V per MIL-STD-883, Method 3015;
> 200V using machine model (C = 200pF, R = 0)
• Packages include 25 mil pitch SSOP, 19.6 mil pitch TSSOP,
15.7 mil pitch TVSOP and 25 mil pitch Cerpack
• Extended commercial range of -40°C to +85°C
• Balanced Output Drivers: ±24mA (commercial),
±16mA (military)
• Reduced system switching noise
• Typical VOLP (Output Ground Bounce) < 0.6V at
VCC = 5V, TA = 25°C
• Ideal for new generation x86 write-back cache solutions
• Suitable for modular x86 architectures
• Four deep write FIFO
• Latch in read path
• Synchronous FIFO reset
DESCRIPTION:
The FCT162701T/AT is an 18-bit Read/Write buffer with
a four deep FIFO and a read-back latch. It can be used as
a read/write buffer between a CPU and memory or to
interface a high-speed bus and a slow peripheral. The A-
to-B (write) path has a four deep FIFO for pipelined opera-
tions. The FIFO can be reset and a FIFO full condition is
indicated by the full flag (FF). The B-to-A (read) path has a
latch. A HIGH on LE, allows data to flow transparently from
B-to-A. A LOW on LE allows the data to be latched on the
falling edge of LE.
The FCT162701T/AT has a balanced output drive with
series termination. This provides low ground bounce,
minimal undershoot and controlled output edge rates.
FUNCTIONAL BLOCK DIAGRAM
A1-18
18
RESET
CLK
WCE
RCE
FF
OEAB
FIFO
(4 deep)
OEBA
LATCH
LE
18
B1-18
The IDT logo is a registered trademark of Integrated Device Techology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
5.15
2915 drw 01
AUGUST 1996
DSC-2915/3
1

1 page




IDT54FCT16270ATPV pdf
IDT54/74FCT162701T/AT
FAST CMOS 18-BIT R/W BUFFER
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = -40°C to +85°C, VCC = 5.0V ± 10%; Military: TA = -55°C to +125°C, VCC = 5.0V ± 10%
Symbol
VIH
Parameter
Input HIGH Level
Test Conditions(1)
Guaranteed Logic HIGH Level
Min. Typ.(2)
2.0 —
VIL Input LOW Level
Guaranteed Logic LOW Level
II H Input HIGH Current (Input pins)(5) VCC = Max.
VI = VCC
Input HIGH Current (I/O pins)(5)
II L Input LOW Current (Input pins)(5)
VI = GND
Input LOW Current (I/O pins)(5)
IOZH
IOZL
High Impedance Output Current
(3-State Output pins)(5)
VCC = Max.
VO = 2.7V
VO = 0.5V
VIK Clamp Diode Voltage
IOS Short Circuit Current
VCC = Min., IIN = –18mA
VCC = Max., VO = GND(3)
0.7
–80 140
VH Input Hysteresis
— 100
ICCL
ICCH
ICCZ
Quiescent Power Supply Current VCC = Max., VIN = GND or VCC
—5
Max.
0.8
±1
±1
±1
±1
±1
±1
1.2
225
500
Unit
V
V
µA
µA
V
mA
mV
µA
2915 lnk 04
OUTPUT DRIVE CHARACTERISTICS
Symbol
IODL
Parameter
Output LOW Current
Test Conditions(1)
VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V(3)
Min. Typ.(2) Max. Unit
60 115 200 mA
IODH
Output HIGH Current
VCC = 5V, VIN = VIH or VIL, VOUT = 1.5V(3)
–60 –115 –200 mA
VOH Output HIGH Voltage
VCC = Min.
VIN = VIH or VIL
IOH = –16mA MIL.
2.4 3.3
IOH = –24mA COM'L.
V
VOL Output LOW Voltage
VCC = Min.
VIN = VIH or VIL
IOL = 16mA MIL.
IOL = 24mA COM'L.
— 0.3 0.55
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient.
3. Not more than one output should be tested at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. The test limit for this parameter is ± 5µA at TA = –55°C.
V
2915 lnk 05
5.15 5

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