DataSheet.es    


PDF IDT6167 Data sheet ( Hoja de datos )

Número de pieza IDT6167
Descripción CMOS STATIC RAM 16K (16K x 1-BIT)
Fabricantes Integrated Device Technology 
Logotipo Integrated Device Technology Logotipo



Hay una vista previa y un enlace de descarga de IDT6167 (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! IDT6167 Hoja de datos, Descripción, Manual

Integrated Device Technology, Inc.
CMOS STATIC RAM
16K (16K x 1-BIT)
IDT6167SA
IDT6167LA
FEATURES:
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage
(IDT6167LA only)
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin
SOJ
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-
error rates
• Separate data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM orga-
nized as 16K x 1. The part is fabricated using IDT’s high-
performance, high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When CS goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compat-
ible and operate from a single 5V supply, thus simplifying
system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A0
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
VCC
GND
A13
DIN
CS
CONTROL
LOGIC
WE
I/O CONTROL
DOUT
2981 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.2
MARCH 1996
2981/5
1

1 page




IDT6167 pdf
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2981 tbl 10
5V
DATAOUT
255
480
30pF*
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DATAOUT
255
5V
480
5pF*
2981 drw 04
Figure 1. AC Test Load
*Includes scope and jig.
2981 drw 05
Figure 2. AC Test Load
(for tCLZ, tCHZ, tWHZ and tOW)
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, All Temperature Ranges)
6167SA15 6167SA20/25 6167SA35/45(1) 6167SA55(1)/70(1)
6167LA15 6167LA20/25 6167LA35/45(1) 6167LA55(1)/70(1)
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Unit
Read Cycle
tRC Read Cycle Time
15 — 20/25 — 35/45 — 55/70 — ns
tAA Address Access Time
— 15
— 20/25 — 35/45 — 55/70 ns
tACS
tCLZ(2)
tCHZ(2)
Chip Select Access Time
Chip Deselect to Output in Low-Z
Chip Select to Output in High-Z
— 15
— 20/25 — 35/45 — 55/70 ns
3 — 5/5 — 5/5 — 5/5 — ns
— 10
— 10/10 — 15/30 — 40/40 ns
tOH
tPU(2)
tPD(2)
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
3 — 5/5 — 5/5 — 5/5 — ns
0 — 0/0 — 0/0 — 0/0 — ns
— 15
— 20/25 — 35/45 — 55/70 ns
Write Cycle
tWC Write Cycle Time
15 — 20/20 — 30/45 — 55/70 — ns
tCW Chip Select to End-of-Write
15 — 15/20 — 30/40 — 45/55 — ns
tAW Address Valid to End-of-Write
15 — 15/20 — 30/40 — 45/55 — ns
tAS Address Set-up Time
0 — 0/0 — 0/0 — 0/0 — ns
tWP Write Pulse Width
13 — 15/20 — 30/30 — 35/40 — ns
tWR Write Recovery Time
0 — 0/0 — 0/0 — 0/0 — ns
tDW Data Valid to End-of-Write
10 — 12/15 — 17/20 — 25/30 — ns
tDH
tWHZ(2)
tOW(2)
Data Hold Time
Write Enable to Output in High-Z
Output Active from End-of-Write
0 — 0/0 — 0/0 — 0/0 — ns
—7
— 8/8 — 15/30 — 40/40 ns
0 — 0/0 — 0/0 — 0/0 — ns
NOTES:
1. –55°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices.
2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
2981 tbl 11
5.2 5

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet IDT6167.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IDT6167CMOS STATIC RAM 16K (16K x 1-BIT)Integrated Device Technology
Integrated Device Technology
IDT6167LACMOS STATIC RAM 16K (16K x 1-BIT)Integrated Device Technology
Integrated Device Technology
IDT6167SACMOS STATIC RAM 16K (16K x 1-BIT)Integrated Device Technology
Integrated Device Technology
IDT6168CMOS STATIC RAM 16K (4K x 4-BIT)Integrated Device Technology
Integrated Device Technology

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar