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PDF DU28200M Data sheet ( Hoja de datos )
| Número de pieza | DU28200M | |
| Descripción | RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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an AMP company
RF MOSFET Power Transistor, 2OOW,28V
2 - 175 MHz
DU28200M
Features
N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
P&--4
v2.00
I
Absolute Maximum Ratings at 25°C
Parameter
I Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
I Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
I Symbol I Rating
1 Units 1
( V,, (
V
OS
‘DS
65
20
20
Iv
V
A
I
1 P,
TJ
T
STG
/ 389
200
1W
“C
-65 to +150
“C
1
Electrical Characteristics at 25°C
Parameter
Test Conditions
Drain-Source Breakdown Voltage
BVDss 65 - V V,,=O.O V, I,,=250 mA
Drain-Source Leakage Current
Gate-Source Leakage Current
1 Gate Threshold Voltage
FonvardTransconductance
Input Capacitance
Output Capacitance
( Reverse Capacitance
Power Gain
Drain Efficiency
Load MismatchTolerance
‘cm 5.0 n-IA V,,=28.0 V, V,,=O.O V‘
‘GSS
5.0 pA v,,=20.0 v, V,stO.O v
I vG,rr,, 1 2.0 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA
GM 2.5 - S V,,=lO.O V, I,,=50 A, ~v,,=l .O V, 80~ Pulse’
CISS
- 225 pF Vr,,=28.0 V, F=l .OMHz’
COSS 200 pF V,,=28.0 V, F=l .OMHz’
I CFSS 1 - ( 40 1 pF 1 V,,=28.0 V, F=l.O MHz’
GP 13 - dB V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz
% 55 - % V,,=28.0 V. I,,=1 000 mA, P,, -200.0 W, F=175 MHz
VSWR-T
-
lo:1
- V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz
* Per Side
Specifications Subject to Change Without Notice.
I
I
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DU28200M.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DU28200 | RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz | Tyco Electronics |
| DU28200M | RF MOSFET Power Transistor/ 2OOW/ 28V 2 - 175 MHz | Tyco Electronics |
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