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PDF 2SD2538 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2538 | |
| Descripción | Silicon NPN triple diffusion planer type Darlington(For power amplification) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SD2538
Silicon NPN triple diffusion planer type Darlington
For power amplification
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
I Features
• High forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
60
5
4
2
35
2
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Full Pack Package
Internal Connection
B
C
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2 *
VCE(sat)
VBE
fT
ton
tstg
tf
VCB = 60 V, IE = 0
VCE = 30 V, IB = 0
VEB = 5 V, IC = 0
IC = 30 mA, IB = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 4 V, IC = 2 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA
VCC = 50 V
Note) *: Rank classification
Rank
P
Q
hFE2 4 000 to 10 000 2 000 to 5 000
E
Min
60
1 000
2 000
Typ Max
1
2
2
10 000
2.5
2.8
20
0.5
4.0
1.0
Unit
mA
mA
mA
V
V
V
MHz
µs
µs
µs
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD2538.PDF ] | |
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