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PDF 2SD2537 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2537 | |
| Descripción | Medium Power Transistor (25V/ 1.2A) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
2SD2537
Medium Power Transistor (25V, 1.2A)
2SD2537
!Features
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
12
V
Collector current
Collector power dissipation
1.2 A (DC)
IC 2 A (Pulse) ∗1
PC 2 W ∗2
Junction temperature
Tj 150 °C
Storage temperature
Tstg −55~+150 °C
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board.
!External dimensions (Units : mm)
2SD2537
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD2537
MPT3
VW
DV∗
T100
1000
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
30
25
12
−
−
−
820
−
−
Typ.
−
−
−
−
−
−
−
200
20
Max.
−
−
−
0.3
0.3
0.3
2700
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=30V
VEB=12V
IC/IB=500mA/10mA
VCE/IC=5V/0.5A
VCE=10V, IE=−50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
∗
∗
1/1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2537.PDF ] | |
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