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PDF 2SC5788 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5788 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SC5788
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
■ Features
• High-speed switching (tstg: storage time/tf: fall time is short)
• Low collector to emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• Allowing automatic insertion with radial taping
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
6
3
6
15
2
150
−55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: C5788
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1*
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 60 V, IE = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
IC = 3 A, IB = 375 mA
VCE = 10 V, IC = 0.1 A, f = 10 MHz
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60 V
100 µA
100 µA
1 mA
120 320
40
0.8 V
180 MHz
0.2 0.3
µs
0.55 0.7
µs
0.1 0.15 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
hFE1 160 to 320 120 to 250
Publication date: November 2002
SJD00290AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC5788.PDF ] | |
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