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PDF 2SC5720 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5720 | |
| Descripción | MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
2SC5720
Unit: mm
· Low Saturation Voltage:
VCE (sat) (1) = 0.25 V (max)
(IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulsed
VCBO
VCEO
VEBO
IC
ICP
PC (Note1)
Tj
Tstg
15
10
7
5
9
550
150
-55 to 150
Note1: When a device is mounted on a glass epoxy board
(35 mm ´ 30 mm ´ 1mm)
Electrical Characteristics (Ta = 25°C)
Unit
V
V
V
A
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-Emitter breakdown voltage
DC current gain
Collector-Emitter saturation voltage
Collector output capacitance
Note2: Pulse test
Symbol
Test Condition
ICBO
VCB = 15 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V(BR)CEO IC = 1 mA, IB = 0
hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A
hFE(2) (Note2) VCE = 1.5 V, IC = 2 A
hFE(3) (Note2) VCE = 1.5 V, IC = 5 A
VCE (sat)
(Note2)
IC = 3 A, IB = 60 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
10 ¾ ¾ V
700 ¾ 2000
450 ¾
¾
240 ¾
¾
¾ ¾ 0.25 V
¾ 30 ¾ pF
1 2001-10-03
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC5720.PDF ] | |
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