|
|
PDF 2SC5632 Data sheet ( Hoja de datos )
| Número de pieza | 2SC5632 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC5632 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Transistors
2SC5632
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■ Features
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
8
3
50
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 2R
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0
15
V
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
2 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 2 mA
100 350
hFE ratio *
∆hFE hFE2: VCE = 4 V, IC = 100 µA
0.6
1.5
hFE1: VCE = 4 V, IC = 2 mA
Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 4 mA
0.1 V
Transition frequency
fT VCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1.0 1.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ∆hFE = hFE2 / hFE1
Publication date: February 2003
SJC00186BED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SC5632.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC563 | Si NPN Epitaxial Planar |  ETC |
| 2SC5631 | Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier |  Hitachi Semiconductor |
| 2SC5632 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
| 2SC5634 | FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |  Isahaya Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |